Syllabus:

Elemental and compound semiconductors, Fermi-Dirac distribution, Equilibrium and steady state conditions: Equilibrium concentration of electrons and holes, Temperature dependence of carrier concentration, Carrier transport in semiconductors, High field effects, Hall effect, Excess carriers in semiconductors , PN junctions ,contact potential, electrical field, potential and charge density at the junction, energy band diagram, minority carrier distribution, ideal diode equation, electron and hole component of current in forward biased pn junction, piecewise linear model of a diode , effect of temperature on VI characteristics, Diode capacitances, electrical breakdown in pn junctions, Tunnel Diode, Metal semiconductor contacts, bipolar junction transistor, metal insulator semiconductor devices, MOSFET, FinFET.