Course No.

Course Name

L-T-P Credits

Year of Introduction

MVLES 102

ANALOG INTEGRATED CIRCUIT DESIGN-1

4-0-0-4

2015

SYLLABUS

Module 1:

2-Terminal MOS Structure - Flat Band Voltage, Potential Balance and Charge, Effect of Gate-Body Voltage on Surface Condition General Analysis. Inversion: charge sheet approximation, Strong and Weak Inversion, Small Signal Capacitance.

3-Terminal MOS Structure - Contacting Inversion Layer, General Analysis, Body-effect, Pinch-off voltage. Introduction, Regions of Operation.

Module 2:

4-Terminal MOS Structure -Introduction, Complete All-Region Model – Current Equations , Simplified All-Region Models: Linearizing Depletion Region Charge Source-Referenced Simplified All- Region Models, Strong Inversion, Complete Strong Inversion Model: NonSaturation Source-Referenced Simplified Strong- Inversion Models.

Module 3:

 Short Channel Effects, Scaling Theory,Threshold Voltage Variation, Mobility Degradation with Vertical Field , Velocity Saturation, Hot Carrier Effects . MOS Device Models -Level 1 Model, Level 2 Model, Level 3 Model , BSIM Series, Other Models, Charge and Capacitor Modeling, Temperature Dependence. Noise: Statistical Characteristics of Noise,Noise Spectrum, Amplitude Distribution ,Correlated and Uncorrelated Sources. Types of Noise: Thermal, Flicker, Shot Noise Representation of Noise in Circuits.

Module 4:

Single-Stage Amplifiers - Introduction to basic amplifier Configurations - Resistive Load, Active Loads: Gate-Drain Connected Loads: CS, CD and CG, Frquency Response Current-Source Load: CS, CD and CG, Frequency Response Cascode, Folded Cascode, Push-pull amplifier, Noise Analysis.