Module 1

Semiconductors Fundamentals, Mosfet Overview and MOS Capacitor

Semiconductors: Intrinsic Semiconductors, Free Electrons, and Holes, Extrinsic Semiconductors, Equilibrium in the Absence of Electric Field, Equilibrium in the Presence of Electric Field, Nonequilibrium; Quasi-Fermi Levels, Relations between Charge Density, Electric Field, and Potentials; Poisson's Equation
Conduction: Transit Time, Drift, Diffusion, Total Current
Contact Potentials, The pn Junction
Overview of the MOS Transistor: Basic Structure, A Qualitative Description of MOS Transistor Operation, MOS Transistor Characteristics
The Mos Capacitor: The Flatband Voltage, Potential Balance and Charge Balance, Effect of Gate-Body Voltage on Surface Condition: Flatband Condition, Accumulation, Depletion, Analysis, Inversion: General Relations and Regions of Inversion, Strong Inversion, Weak Inversion, Moderate Inversion, Small-Signal Capacitance, Summary of Properties of the Regions of Inversion

Module 2

The Three-Terminal Mos Structure: Contacting the Inversion Layer, The Body Effect, Regions of Inversion: Approximate Limits, Strong Inversion, Weak Inversion, Moderate Inversion, A "Vnullnull Control" Point of View: Fundamentals, The "Pinchoff” Voltage
The Four-Terminal Mos Transistor: Transistor Regions of Operation, Complete All-Region Model, Simplified All-Region Models: Linearizing the Depletion Region Charge, Body-Referenced Simplified All-Region Models, Source-Referenced Simplified All-Region Models, Charge Formulation of Simplified All-Region Models
Models Based on Quasi-Fermi Potentials,  Regions of Inversion in Terms of Terminal Voltages
Strong Inversion: Complete Strong-Inversion Model, Body-Referenced Simplified Strong-Inversion Model,  Source-Referenced Simplified Strong-Inversion Model
 Weak Inversion: Special Conditions in Weak Inversion, Body-Referenced Model, Source-Referenced Model
Moderate-Inversion and Single-Piece Models, Source-Referenced vs. Body-Referenced Modeling, Effective Mobility, Effect of Extrinsic Source and Drain Series Resistances, Temperature Effects, Breakdown, The p-Channel MOS Transistor, Enhancement-Mode and Depletion-Mode Transistors, Model Parameter Values, Model Accuracy, and Model Comparison

Module 3

Small-Channel And Thin Oxide Effects: Carrier Velocity Saturation, Channel Length Modulation, Charge Sharing: Short-Channel Devices, Narrow-Channel Devices, Limitations of Charge-Sharing Models, Drain-Induced Barrier Lowering, Punchthrough, Combining Several Small-Dimension Effects into One Model--A Strong-Inversion Example, Hot Carrier Effects; Impact Ionization, Velocity Overshoot and Ballistic Operation, Polysilicon Depletion, Quantum Mechanical Effects, DC Gate Current, Junction Leakage; Band-to-Band Tunneling; GIDL, Scaling: Classical Scaling, Modern Scaling

Large-Signal Modeling Of The Mos Transistor In Transient Operation: Quasi-Static Operation, Evaluation of Intrinsic Chargers in Quasi-Static Operation: Strong Inversion, Moderate Inversion, Weak Inversion, All-Region Model, Depletion and Accumulation.Transit Time under DC Conditions, Limitations of the Quasi-Static Model
Non-Quasi-Static Modeling: The Continuity Equation, Non-Quasi-Static Analysis. Extrinsic Parasitics: Extrinsic Capacitances, Extrinsic Resistance, Temperature Dependence, Simplified Models

Module 4

Small-Signal Modeling For Low And Medium Frequencies:

Low-Frequency Small-Signal Model for the Intrinsic Part: Small-Signal Model for the Drain-to-Source Current, Small-Signal Model for the Gate and Body Currents, Complete Low-Frequency Small-Signal Model for the Intrinsic Part, Strong Inversion, Weak Inversion, Moderate Inversion, All-Region Models. A Medium-Frequency Small-Signal Model for the Intrinsic Part: Intrinsic Capacitances.Including the Extrinsic Part
 Noise: White Noise, Flicker Noise, Noise in Extrinsic Resistances, Including Noise in Small-Signal Circuits.All-Region Models

Modeling For Circuit Simulation: Types of Models, Models for Device Analysis and Design, Device Models for Circuit Simulation,  Attributes of Good Compact Models, Model Formulation: General Consideration and Choices, Model Implementation in Circuit Simulators, Model Testing, Parameter Extraction, Simulation and Extraction for RF Applications, Common MOSFET Models Available in Circuit Simulators: BSIM, EKV, PSP, Other Models